Back to results
US 12,699,319 B2Granted
Semiconductor photoresist composition and method of forming patterns using the composition
AssigneesSamsung Electronics Co., Ltd., Dct Material LLC
InventorsChawon Koh, Yeon Hee Seong, Tsunehiro Nishi, Geun Su Lee, Sung Jae Jung, Moo Hyun Koh, Ji Young Park, Seungyeol Baek
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to a semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and a method of forming patterns by using the semiconductor photoresist composition.
Claims20
A semiconductor photoresist composition, comprising
- an organometallic compound represented by Chemical Formula 1, and
- a solvent:
- wherein, in Chemical Formula 1,
- M1 to M3 are each independently one metal selected from Sn, Sb, Te, I, Ti, Bi, Po, At, In, Ag, Au, Pt, Si, Al, or Ga,
- R1 to R6 are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C3 to C20 cycloalkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C3 to C20 cycloalkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a functional group containing at least one heteroatom selected from O, S, Si, N, Se, Te, P, Ge, Sn, Al, or In, or a combination thereof, and
- at least one of R1 to R6 is a functional group containing at least one heteroatom selected from O, S, Si, N, Se, Te, P, Ge, Sn, Al, or In.
3 more elements
Dependencies are inferred from the claim text.