Back to results
US 12,699,314 B2Granted
Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
AssigneeHoya Corporation
InventorsKota Suzuki, Takahiro Onoue
Life of this patent
Estimating the term…
Abstract
A multilayered-reflective-film-provided substrate includes: a substrate; a multilayered reflective film provided on the substrate; and a protective film provided on the multilayered reflective film, in which the protective film includes ruthenium (Ru) and at least one additive material selected from aluminum (Al), yttrium (Y), zirconium (Zr), rhodium (Rh), and hafnium (Hf), and a content of the additive material is 5% or more by atom and less than 50% by atom.
Claims21
A multilayered-reflective-film-provided substrate comprising:
- a substrate;
- a multilayered reflective film provided above the substrate;
- and
- a protective film provided above the multilayered reflective film, wherein
- the protective film includes a first layer including a ruthenium (Ru) compound containing ruthenium (Ru), rhodium (Rh) and at least one of the following elements:
- magnesium (Mg), aluminum (Al), vanadium (V), chromium (Cr), germanium (Ge), hafnium (Hf) and tungsten (W),
- wherein a proportion of Ru in the Ru compound is greater than 50% by atom and less than 100% by atom.
4 more elements
A reflective mask blank comprising:
- a substrate;
- a multilayered reflective film provided above the substrate;
- a protective film provided above the multilayered reflective film;
- and
- an absorber film above the protective film, wherein
- the protective film includes a first layer including a ruthenium (Ru) compound containing ruthenium (Ru), rhodium (Rh) and at least one of the following elements:
- magnesium (Mg), aluminum (Al), vanadium (V), chromium (Cr), germanium (Ge), hafnium (Hf) and tungsten (W),
- wherein a proportion of Ru in the Ru compound is greater than 50% by atom and less than 100% by atom.
5 more elements
A reflective mask comprising:
- a substrate;
- a multilayered reflective film provided above the substrate;
- a protective film provided above the multilayered reflective film;
- and
- an absorber pattern above the protective film,
- wherein:
- the protective film includes a first layer including a ruthenium (Ru) compound containing ruthenium (Ru), rhodium (Rh) and at least one of the following elements:
- magnesium (Mg), aluminum (Al), vanadium (V), chromium (Cr), germanium (Ge), hafnium (Hf) and tungsten (W), and
- wherein a proportion of Ru in the Ru compound is greater than 50% by atom and less than 100% by atom.
6 more elements
Dependencies are inferred from the claim text.