Infrared modulator, optical device including the infrared modulator, and optical computing system including the optical device
AssigneeSamsung Electronics Co., Ltd.
InventorsChangyoung Park, Sanghun Lee
Life of this patent
Estimating the term…
Abstract
Provided is an infrared modulator including a silicon substrate, a multiple buffer layer on the silicon substrate, the multiple buffer layer including indium phosphide (InP), a first type semiconductor layer on the multiple buffer layer, the first type semiconductor layer including InP, a light absorption layer on the first type semiconductor layer, the light absorption layer including a quantum well structure including indium gallium arsenic phosphide (InGaAsP), and a second type semiconductor layer on the light absorption layer, the second type semiconductor layer including InP.
Claims16
An optical device comprising:
- a silicon substrate;
- an infrared modulator on the silicon substrate;
- and
- a photodetector on the silicon substrate and electrically connected to the infrared modulator,
- wherein the infrared modulator comprises:
- a multiple buffer layer on the silicon substrate, the multiple buffer layer comprising indium phosphide (InP);
- a first type semiconductor layer on the multiple buffer layer, the first type semiconductor layer comprising InP;
- a light absorption layer on the first type semiconductor layer, the light absorption layer comprising a quantum well structure comprising indium gallium arsenic phosphide (InGaAsP);
- and
- a second type semiconductor layer on the light absorption layer, the second type semiconductor layer comprising InP, and
- wherein the photodetector comprises:
- the multiple buffer layer of the infrared modulator;
- a portion of the first type semiconductor layer;
- a portion of the second type semiconductor layer;
- and
- a second light absorption layer comprising GaAs, the second light absorption layer being continuously disposed between the first type semiconductor layer and the second type semiconductor layer.
An optical computing system comprising:
- a light source;
- an optical device configured to output a decision signal based on a type of a light input from the light source;
- and
- a processor configured to adjust an input signal to the optical device and process an output from the optical device,
- wherein the optical device comprises:
- a silicon substrate;
- an infrared modulator on the silicon substrate;
- and
- a photodetector on the silicon substrate, the photodetector being electrically connected to the infrared modulator, and
- wherein the infrared modulator comprises:
- a multiple buffer layer comprising indium phosphide (InP);
- a first type semiconductor layer on the multiple buffer layer, the first type semiconductor layer comprising InP;
- a light absorption layer on the first type semiconductor layer, the light absorption layer comprising a quantum well structure comprising indium gallium arsenic phosphide (InGaAsP);
- and
- a second type semiconductor layer on the light absorption layer, the second type semiconductor layer comprising InP, and
- wherein the photodetector comprises:
- the multiple buffer layer of the infrared modulator;
- a portion of the first type semiconductor layer;
- a portion of the second type semiconductor layer;
- and
- a second light absorption layer comprising GaAs, the second light absorption layer being continuously disposed between the first type semiconductor layer and the second type semiconductor layer.
Dependencies are inferred from the claim text.