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US 12,699,223 B2Granted
Semiconductor devices with embedded silicon lens
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFeng-Wei Kuo, Wen-Shiang Liao
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Abstract
A semiconductor device includes a silicon substrate having a first region and a second region. The semiconductor device includes a silicon lens formed in the first region and along a surface of the silicon substrate on a first side of the silicon substrate. The semiconductor device includes a photonic die disposed in the first region and on a second side of the silicon substrate, the second side being opposite to the first side. The semiconductor device includes a waveguide disposed on the second side of the silicon substrate and having a grating coupler.
Claims20
A semiconductor device, comprising:
- a silicon substrate having a first region and a second region;
- a silicon lens formed in the first region and along a surface of the silicon substrate on a first side of the silicon substrate, wherein the silicon substrate includes a staircase profile in the first region, the staircase profile comprising at least a central portion having a first depth and a recessed portion surrounding the central portion and having a second depth less than the first depth, and wherein the staircase profile is rounded such that the rounded staircase profile defines the silicon lens;
- a dielectric layer disposed in the first region and on a second side of the silicon substrate, the second side being opposite to the first side wherein the silicon lens is formed;
- an electronic die disposed in the second region, on the second side of the silicon substrate, and adjacent to the dielectric layer;
- a photonic die disposed in the first and second regions and on the second side of the silicon substrate, wherein the dielectric layer and the electronic die are interposed between the photonic die and the silicon substrate;
- and
- a waveguide disposed on the second side of the silicon substrate and having a grating coupler.
4 more elements
A semiconductor package, comprising:
- a first substrate disposed over a package substrate;
- a grating coupler disposed over the first substrate;
- a plurality of first conductive features disposed in a layer over the grating coupler;
- an electronic die disposed over the plurality of first conductive features and including a plurality of second conductive features;
- a dielectric layer disposed over the grating coupler and adjacent to the electronic die;
- and
- a silicon lens embedded along a first surface of a silicon substrate, wherein the silicon substrate includes a staircase profile that comprises at least a central portion having a first depth and a recessed portion surrounding the central portion and having a second depth less than the first depth, and wherein the staircase profile is rounded such that the rounded staircase profile defines the silicon lens, wherein the electronic die and the dielectric layer are formed along a second surface of the silicon substrate opposite to the first surface, and wherein the electronic die and the dielectric layer are interposed between the silicon substrate and the grating coupler.
4 more elements
A semiconductor device, comprising:
- a silicon substrate having a first side and a second side opposite to the first side, wherein the silicon substrate comprises a silicon lens formed along a surface of the silicon substrate and on the first side of the silicon substrate, wherein the silicon substrate includes a staircase profile that comprises at least a central portion having a first depth and a recessed portion surrounding the central portion and having a second depth less than the first depth, and wherein the staircase profile is rounded such that the rounded staircase profile defines the silicon lens;
- a dielectric layer disposed on the second side of the silicon substrate;
- an electronic die disposed on the second side of the silicon substrate and adjacent to the dielectric layer;
- and
- a photonic die disposed on the dielectric layer, wherein the dielectric layer and the electronic die are interposed between the silicon substrate and the photonic die, wherein a width of the silicon substrate is greater than a width of the dielectric layer or a width of the electronic die.
2 more elements
Dependencies are inferred from the claim text.