Method of particle abatement in a semiconductor processing apparatus

A method of particle abatement in a semiconductor processing apparatus, the method comprising:

• processing a substrate in a process chamber of the semiconductor processing apparatus comprising the steps of:
• loading the substrate in the process chamber, the process chamber having one or more inner surfaces;
• providing a reaction gas mixture to the process chamber, thereby forming a substrate film on the substrate and a chamber wall film on the one or more inner surfaces;
• loading the substrate out of the process chamber, thereby emptying the process chamber;
• repeating the processing one or more times until the chamber wall film has reached a pre-determined chamber wall film thickness;
• and
• when the chamber wall film has reached the pre-determined chamber wall film thickness, exposing the inner surfaces to an ambient, thereby modifying at least an upper portion of the chamber wall film, and
• wherein the substrate film and the chamber wall film have a first chemical nature and wherein the modified upper portion of the chamber wall film has a second chemical nature, the second chemical nature being different than the first chemical nature.

A method of particle abatement in a semiconductor processing apparatus, the method comprising:

• processing a substrate in a process chamber of the semiconductor processing apparatus comprising the steps of:
• loading the substrate in the process chamber, the process chamber having one or more inner surfaces;
• providing a reaction gas mixture to the process chamber, thereby forming a substrate film on the substrate and a chamber wall film on the one or more inner surfaces;
• loading the substrate out of the process chamber, thereby emptying the process chamber;
• repeating the processing one or more times until the chamber wall film has reached a pre-determined chamber wall film thickness;
• and
• when the chamber wall film has reached the pre-determined chamber wall film thickness, exposing the inner surfaces to an ambient, thereby modifying at least an upper portion of the chamber wall film, and
• wherein the providing of the reaction gas mixture further comprises providing a dopant precursor gas to the process chamber.