Back to results
US 12,698,241 B2Granted
Methods of providing high purity SiOC and SiC materials
AssigneePallidus, Inc.
InventorsDouglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Glenn Sandgren, Mark S. Land, Brian L. Benac
Life of this patent
Estimating the term…
Abstract
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Claims14
A method of making silicon oxycarbide, the method comprising:
- a. distilling a liquid comprising silicon, carbon and oxygen;
- b. curing the liquid to a cured material;
- and,
- c. transforming the cured material to a ceramic material consisting essentially of silicon, carbon and oxygen and being in the form of a powder;
- wherein the ceramic material powder has a hardness;
- and
- d. further comprising forming the ceramic material powder into a volumetric shape, the volumetric shape having a hardness of less than ⅓ the hardness of the ceramic material powder.
4 more elements
Dependencies are inferred from the claim text.