Method for fabricating trihalodisilane and method for fabricating semiconductor device using the same

A method for fabricating trihalodisilane, the method comprising:

• providing a halodisilane including at least four halogen atoms;
• cooling the halodisilane to a first temperature that is higher than a freezing point of the halodisilane and lower than 15° C.;
• mixing the cooled halodisilane with a mixed reducing agent including an aluminum reducing agent and a tin reducing agent to generate a mixture;
• stirring the mixture at a second temperature that is higher than the first temperature;
• and
• separating a 1,1,1-trihalodisilane from the mixture,
• wherein the method does not include the use of a solvent other than the aluminum reducing agent and the tin reducing agent.

A method for fabricating a semiconductor device, the method comprising:

• providing a substrate;
• and
• forming a silicon-containing layer on the substrate by providing a silicon precursor including a 1,1,1-trihalodisilane,
• wherein providing the silicon precursor includes:
• providing a halodisilane including at least four halogen atoms, and
• reducing the halodisilane using a mixed reducing agent including an aluminum reducing agent and a tin reducing agent,
• wherein reducing the halodisilane does not include the use of a solvent other than the aluminum reducing agent and the tin reducing agent.