MEMS device manufacturing method
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsAudrey Berthelot, Philippe Robert
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Abstract
The present description concerns a method of manufacturing a microelectromechanical device, including the following successive steps: providing an SOI structure comprising a first semiconductor layer on an insulating layer; forming a second semiconductor layer by epitaxy on top of and in contact with the upper surface of the first semiconductor layer; transferring and bonding, by molecular bonding, a third semiconductor layer onto and in contact with the upper surface of the second semiconductor layer; and forming trenches vertically extending from the upper surface of the third semiconductor layer all the way to the upper surface of the insulating layer, said trenches laterally delimiting a mechanical element of the device.
Claims11
Method of manufacturing a microelectromechanical device comprising the following successive steps:
- providing an SOI structure comprising a first semiconductor layer on an insulating layer;
- forming a second semiconductor layer by epitaxy on top of and in contact with the upper surface of the first semiconductor layer;
- transferring and bonding, by molecular bonding, a third semiconductor layer onto and in contact with the upper surface of the second semiconductor layer;
- and
- forming trenches vertically extending from the upper surface of the third semiconductor layer to the upper surface of the insulating layer, said trenches laterally delimiting a mechanical element of the device.
Microelectromechanical device comprising a mechanical element comprising, across its thickness, a first semiconductor layer of an SOI structure comprising the first semiconductor layer on an insulating layer, a second semiconductor layer formed by epitaxy on top of and in contact with the upper surface of the first semiconductor layer, and a third semiconductor layer bonded, by molecular bonding, on top of and in contact with the upper surface of the second semiconductor layer, the mechanical element being laterally delimited by trenches vertically extending from the upper surface of the third semiconductor layer to the upper surface of the insulating layer.
Dependencies are inferred from the claim text.