Semiconductor structure and manufacturing method for the same

A micro electro mechanical system (MEMS) structure, comprising:

• a device substrate having a first region and a second region different from the first region;
• a capping substrate bonded over the device substrate;
• a first cavity in the first region and between the device substrate and capping substrate, wherein the first cavity has a first cavity pressure;
• a second cavity in the second region and between the device substrate and capping substrate, wherein the second cavity has a second cavity pressure lower than the first cavity pressure;
• an outgassing material, wherein the outgassing material comprises a top surface and a first sidewall exposed to the first cavity, wherein the outgassing material comprises a trench, a depth of the trench being less than or equal to a thickness of the outgassing material, and wherein the trench comprises a second sidewall defining the trench;
• and
• a passivation layer disposed over the device substrate, and is in direct contact with the outgassing material, wherein the first sidewall of the outgassing material extends from the top surface of the outgassing material to a top surface of the passivation layer.

A micro electro mechanical system (MEMS) structure, comprising:

• a device substrate having a first region and a second region adjacent to the first region;
• a capping substrate bonded over the device substrate;
• a first cavity in the first region and between the device substrate and capping substrate, wherein the first cavity has a first cavity pressure;
• a second cavity in the second region and between the device substrate and capping substrate, wherein the second cavity has a second cavity pressure lower than the first cavity pressure;
• an outgassing material, wherein the outgassing material comprises a plurality of protrusions protruding away from the device substrate, a top surface and a first sidewall exposed to the first cavity, the outgassing material is free from being in direct contact with the capping substrate;
• and
• a passivation layer disposed over the device substrate, and is in direct contact with the outgassing material, wherein the first sidewall of the outgassing material extends from the top surface of the outgassing material to a top surface of the passivation layer.