Semiconductor device and method for manufacturing the semiconductor device

A method for producing a semiconductor device that includes a semiconductor chip between a first supporting member and a second supporting member facing each other, the method comprising:

• preparing the semiconductor chip that is warped and includes one surface having a plurality of protrusions and another surface opposite to the one surface;
• joining the first supporting member to the other surface of the semiconductor chip through a lower layer joining portion such that the other surface faces the first supporting member, the lower layer joining portion including a pressure-sintered layer;
• and
• joining the second supporting member to the one surface of the semiconductor chip through an upper layer joining portion such that the one surface faces the second supporting member, the upper layer joining portion including a pressure-sintered layer, wherein
• joining the second supporting member to the one surface through the upper layer joining portion further includes:
• heating and pressurizing a first constituent member containing a sintering material on the one surface of the semiconductor chip that is warped to form a pre-joining layer on the one surface of the semiconductor chip, wherein spaces between the plurality of protrusions are filled with the pre-joining layer and the pre-joining layer is in contact with the plurality of protrusions and has a flat surface on a side of the pre-joining layer away from the semiconductor chip;
• thereafter
• arranging, on the flat surface of the pre-joining layer, the second supporting member through a second constituent member containing a sintering material;
• and
• heating and pressurizing the second constituent member, wherein the upper layer joining portion is formed by the second constituent member and the pre-joining layer.