Semiconductor device assembly with through-package interconnect and associated systems, devices, and methods

A semiconductor device assembly, comprising:

• a support substrate comprising one or more first bond pads;
• a first semiconductor device carried by the support substrate, the first semiconductor device comprising:
• a second bond pad at a top surface of the first semiconductor device;
• and
• a wirebond;
• a second semiconductor device carried by the first semiconductor device, the second semiconductor device comprising:
• an upper surface and a lower surface, wherein the wirebond is electrically coupled between a first bond pad of the one or more first bond pads and the second bond pad, wherein a portion of the wirebond is encased in a material between the top surface of the first semiconductor device and the lower surface of the second semiconductor device;
• an array of third bond pads at the upper surface;
• and
• a redistribution network at the upper surface, the redistribution network having an array of fourth bond pads;
• an encapsulant encasing the first semiconductor device and the second semiconductor device, wherein the material is different from the encapsulant;
• and
• an array of cylindrical interconnects each attached to a corresponding fourth bond pad in the array of fourth bond pads, wherein at least a portion of each cylindrical interconnect in the array of interconnects extends beyond an outer surface of the encapsulant, and wherein each cylindrical interconnect of the array of cylindrical interconnects has a cylindrical shape with a planar upper surface.

A stacked semiconductor package assembly, comprising:

• a first semiconductor package, the first semiconductor package comprising:
• a first support substrate having a first surface and a second surface opposite the first surface, wherein the first surface includes one or more substrate bond pads, and wherein the second surface includes one or more exterior bond pads;
• a first semiconductor die carried by the first surface of the first support substrate, the first semiconductor die having an active surface and one or more first bond pads at the active surface;
• a second semiconductor die carried by the first semiconductor die;
• one or more wirebonds extending between individual pairs of the one or more first bond pads and the one or more substrate bond pads;
• and
• a first encapsulant encasing the first semiconductor die and the one or more wirebonds, wherein respective portions of the one or more wirebonds are encased in a material, different from the first encapsulant, between the active surface of the first semiconductor die and a bottom surface of the second semiconductor die;
• and
• a second semiconductor package, the second semiconductor package comprising:
• a second support substrate;
• a third semiconductor die carried by the second support substrate, the third semiconductor die having an active surface and a redistribution network at the active surface, wherein the redistribution network includes one or more second bond pads;
• a second encapsulant encasing the third semiconductor die;
• and
• one or more cylindrical interconnects individually attached to each of the one or more second bond pads, wherein at least a portion of each cylindrical interconnect of the one or more cylindrical interconnects extends beyond an outer surface of the second encapsulant and is electrically coupled to the one or more exterior bond pads on the second surface of the first support substrate, and wherein each cylindrical interconnect of the one or more cylindrical interconnects has a cylindrical shape with a planar upper surface.