Method of making semiconductor device having reduced bump height variation

A method of making a semiconductor device, the method comprising:

• forming a first plurality of bump structures on a substrate, wherein each of the first plurality of bump structures has a first width and a first height;
• forming a second plurality of bump structures on the substrate, wherein each of the second plurality of bump structures has a second width and the first height, the second width is less than the first width, and the second plurality of bump structures surrounds the first plurality of bump structures;
• and
• bonding a package substrate to the first plurality of bump structures and the second plurality of bump structures, wherein a distance between a surface of the package substrate and a closest surface of each of the first plurality of bump structures is a first distance, a distance between the surface of the package substrate and a closest surface of each of the second plurality of bump structures is the first distance, and bonding the package substrate to the first plurality of bump structures and the second plurality of bump structures comprises bonding at least one of the first plurality of bump structures to a bump structure on the package substrate.

A method of making a semiconductor device, the method comprising:

• forming a first plurality of bump structures on a substrate, wherein each of the first plurality of bump structures has a first width;
• depositing a first solder layer on each of the first plurality of bump structures, wherein a combined height of the first solder layer and a corresponding bump structure of the first plurality of bump structures is a first height;
• forming a second plurality of bump structures on the substrate, wherein each of the second plurality of bump structures has a second width, the second width is less than the first width, and the second plurality of bump structures surrounds the first plurality of bump structures;
• depositing a second solder layer on each of the second plurality of bump structures, wherein a combined height of the second solder layer and a corresponding bump structure of the second plurality of bump structures is the first height;
• and
• bonding a package substrate to the first plurality of bump structures and the second plurality of bump structures, wherein bonding the package substrate to the first plurality of bump structures comprises bonding using the first solder layer, bonding the package substrate to the second plurality of bump structures comprises bonding using the second solder layer, wherein at least one of the first plurality of bump structures is physically between the package substrate and a surface of the substrate closest to the package substrate.