Back to results
US 12,696,770 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeFuji Electric Co., Ltd.
InventorRyotaro Tsuruoka
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a semiconductor base body; a semiconductor chip; a sintering material layer bonded to a lower surface of the semiconductor chip and having a thickness decreasing toward an outer periphery of the semiconductor chip; and a conductive plate having a main surface facing the lower surface of the semiconductor chip and a recessed portion which the sintering material layer contacts in the main surface, the recessed portion having a depth decreasing toward the outer periphery of the semiconductor chip.
Claims18
A semiconductor device comprising:
- a semiconductor chip;
- a sintering material layer bonded to a lower surface of the semiconductor chip and having a thickness decreasing from a center side of the semiconductor chip toward an outer periphery of the semiconductor chip;
- and
- a conductive plate having a main surface facing the lower surface of the semiconductor chip and a recessed portion in the main surface such that the sintering material layer contacts the recessed portion, the recessed portion having a depth decreasing from the center side of the semiconductor chip toward the outer periphery of the semiconductor chip.
1 more element
A method for manufacturing a semiconductor device comprising:
- forming a recessed portion in a main surface of a conductive plate;
- transferring a sintering material layer having a curved shape to a lower surface of a semiconductor chip;
- and
- causing the sintering material layer transferred to the semiconductor chip to face the recessed portion of the conductive plate, sintering the sintering material layer by performing pressurization and heating from an upper surface side of the semiconductor chip, and bonding the conductive plate and the semiconductor chip to each other, such that the sintering material layer bonded to the lower surface of the semiconductor chip has a thickness decreasing from a center side of the semiconductor chip toward an outer periphery of the semiconductor chip, resulting in the recessed portion having a depth decreasing from the center side of the semiconductor chip toward the outer periphery of the semiconductor chip.
1 more element
Dependencies are inferred from the claim text.