Semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorMakoto Nishihara
Life of this patent
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AssigneeSumitomo Electric Device Innovations, Inc.
InventorMakoto Nishihara
Estimating the term…
A semiconductor device includes a semiconductor chip including a substrate, a transistor provided on an upper surface of the substrate and having an input electrode to which a high frequency signal is input, an output electrode from which the high frequency signal is output, and a reference potential electrode to which a reference potential is supplied, and a metal pattern provided on the upper surface of the substrate and electrically connected to the reference potential electrode, a first capacitor including a first lower electrode provided on the metal pattern and electrically connected to the metal pattern, a first dielectric layer provided on the first lower electrode, and a first upper electrode provided on the first dielectric layer, and a first bonding wire electrically connecting the first upper electrode and a first electrode which is any one of the input electrode and the output electrode.
A semiconductor device comprising:
Dependencies are inferred from the claim text.