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US 12,696,738 B2Granted
Transistor device with sinker contacts and methods for manufacturing the same
AssigneeTexas Instruments Incorporated
InventorsHong Yang, Michael F Chisholm, Yufei Xiong, Yunlong Liu
Life of this patent
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Abstract
In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.
Claims16
A method, comprising:
- providing a partially processed semiconductor wafer with a trench opening etched through a portion of a semiconductor wafer;
- depositing a titanium (Ti) layer over a top surface of the semiconductor wafer and on semiconductor sidewalls and a bottom wall of the trench opening;
- depositing a titanium nitride (TiN) layer on the Ti layer;
- depositing a first conductive layer that partially fills the trench opening and on the TiN layer;
- etching back the first conductive layer thereby removing it from over the surface of the semiconductor wafer;
- depositing a second conductive layer over the top surface of the semiconductor wafer and into the trench opening;
- and
- etching back the second conductive layer thereby removing it from over the surface of the semiconductor wafer,
- wherein a portion of the Ti layer exposed by etching back the first conductive layer is converted to TiN by annealing in a nitrogen ambient prior to depositing the second conductive layer.
6 more elements
A method of forming an integrated circuit, comprising:
- forming a trench opening that extends into a portion of a semiconductor substrate having a top surface;
- depositing a titanium (Ti) layer over the top surface and on semiconductor sidewalls of the trench opening;
- depositing a titanium nitride (TiN) layer on the Ti layer;
- depositing a first conductive layer on the TiN layer leaving an unfilled portion of the trench opening;
- removing the first conductive layer from over the top surface, thereby exposing a portion of the Ti layer;
- depositing a second conductive layer over the top surface and into the unfilled portion of the trench opening;
- removing the second conductive layer from over the top surface of the semiconductor substrate;
- and
- subsequent to removing the first conductive layer from over the top surface, annealing a remaining portion of the first conductive layer within the trench in a nitrogen ambient, thereby converting the exposed portion of the Ti layer to TiN.
6 more elements
A method of forming an electronic device, comprising:
- forming a trench opening that extends into a portion of a semiconductor layer having a top surface, the trench opening meeting the top surface at a corner;
- forming a titanium (Ti) layer over the top surface of the semiconductor layer, on semiconductor sidewalls of the trench opening, and over the corner;
- depositing a titanium nitride (TiN) layer on the Ti layer;
- depositing a first tungsten (W) layer over the TiN layer;
- at least partially removing the W layer and the TiN layer from over the top surface, thereby exposing the Ti layer over the corner;
- annealing the W layer in a nitrogen ambient thereby converting the exposed Ti layer to TiN;
- and
- depositing a second W layer over the corner.
5 more elements
Dependencies are inferred from the claim text.