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AssigneesDenso Corporation, Toyota Jidosha Kabushiki Kaisha, MIRISE Technologies Corporation, Hamamatsu Photonics K.K.
InventorsTakashi Ushijima, Masatake Nagaya, Daisuke Kawaguchi, Keisuke Hara
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A method of manufacturing a semiconductor device includes irradiation of laser on a semiconductor substrate and cutting of the semiconductor substrate. The laser is irradiated on the semiconductor substrate while moving a focal point of the laser inside the semiconductor substrate. The semiconductor includes a specific crystal plane that is easier to be cleaved, and that is tilted to the surface of the semiconductor substrate. The irradiation of the laser includes repetition of a specific modified layer formation process in which one of the specific modified layers along the specific crystal plane is formed by moving the focal point along the specific crystal plane. In the irradiation of the laser, the specific modified layers are arranged in a direction parallel to the surface of the semiconductor substrate. In the cutting of the semiconductor substrate, the semiconductor substrate is cut along the specific modified layers.
A semiconductor substrate for a semiconductor device, the semiconductor substrate comprising:
A semiconductor substrate for a semiconductor device, the semiconductor substrate comprising:
Dependencies are inferred from the claim text.