Light-receiving device, X-ray imaging device, and electronic apparatus

A light-receiving device, comprising:

• a semiconductor substrate including a light-receiving region in which a plurality of light-receiving elements are arranged two-dimensionally in a matrix, and a peripheral region provided around the light-receiving region;
• a first first electrically-conductive region provided at a first surface of the semiconductor substrate for each of the light-receiving elements, wherein the first first electrically-conductive region is coupled to a first electrode, and wherein the first first electrically-conductive region is in the light-receiving region;
• a second first electrically-conductive region provided at the first surface and around the first first electrically-conductive region provided for each of the light-receiving elements, wherein the second first electrically-conductive region is coupled to a second electrode;
• a third first electrically-conductive region provided at the first surface and around the second first electrically-conductive region provided for each of the light-receiving elements, wherein the third first electrically-conductive region is in an electrically floating state;
• a fourth first electrically-conductive region provided at the first surface of the semiconductor substrate and around the light-receiving region, wherein the fourth first electrically-conductive region is in an electrically floating state, and wherein the fourth first electrically-conductive region is in the peripheral region;
• a first second electrically-conductive region embedded and formed in the semiconductor substrate and facing the second first electrically-conductive region, the third first electrically-conductive region, and the fourth first electrically-conductive region;
• and
• a fifth first electrically-conductive region provided around the light-receiving region with the fourth first electrically-conductive region interposed therebetween, the fifth first electrically-conductive region receiving application of a fixed electric potential,
• wherein the first, second, third, and fourth first electrically-conductive regions are first conductivity type electrically-conductive regions, and
• wherein the first second electrically-conductive region is a second conductivity type electrically-conductive region.

A light-receiving device, comprising:

• a semiconductor substrate including a light-receiving region in which a plurality of light-receiving elements are arranged two-dimensionally in a matrix, and a peripheral region provided around the light-receiving region;
• a first first electrically-conductive region provided at a first surface of the semiconductor substrate for each of the light-receiving elements, wherein the first first electrically-conductive region is coupled to a first electrode, and wherein the first first electrically-conductive region is in the light-receiving region;
• a second first electrically-conductive region provided at the first surface and around the first first electrically-conductive region provided for each of the light-receiving elements, wherein the second first electrically-conductive region is coupled to a second electrode;
• a third first electrically-conductive region provided at the first surface and around the second first electrically-conductive region provided for each of the light-receiving elements, wherein the third first electrically-conductive region is in an electrically floating state;
• a fourth first electrically-conductive region provided at the first surface of the semiconductor substrate and around the light-receiving region, wherein the fourth first electrically-conductive region is in an electrically floating state, and wherein the fourth first electrically-conductive region is in the peripheral region;
• and
• a first second electrically-conductive region embedded and formed in the semiconductor substrate and facing the second first electrically-conductive region, the third first electrically-conductive region, and the fourth first electrically-conductive region,
• wherein the third first electrically-conductive region comprises a plurality of third first electrically-conductive regions, and the fourth first electrically-conductive region comprises a plurality of fourth first electrically-conductive regions,
• wherein the light-receiving device further comprises, at the first surface, a second second electrically-conductive region being provided between the third first electrically-conductive regions adjacent to each other, between the third first electrically-conductive region and the fourth first electrically-conductive region adjacent to each other, and between the fourth first electrically-conductive regions adjacent to each other,
• wherein the first, second, third, and fourth first electrically-conductive regions are first conductivity type electrically-conductive regions, and
• wherein the first second electrically-conductive region is a second conductivity type electrically-conductive region.

A light-receiving device, comprising:

• a semiconductor substrate including a light-receiving region in which a plurality of light-receiving elements are arranged two-dimensionally in a matrix, and a peripheral region provided around the light-receiving region;
• a first first electrically-conductive region provided at a first surface of the semiconductor substrate for each of the light-receiving elements, wherein the first first electrically-conductive region is coupled to a first electrode, and wherein the first first electrically-conductive region is in the light-receiving region;
• a second first electrically-conductive region provided at the first surface and around the first first electrically-conductive region provided for each of the light-receiving elements, wherein the second first electrically-conductive region is coupled to a second electrode;
• a third first electrically-conductive region provided at the first surface and around the second first electrically-conductive region provided for each of the light-receiving elements, wherein the third first electrically-conductive region is in an electrically floating state;
• a fourth first electrically-conductive region provided at the first surface of the semiconductor substrate and around the light-receiving region, wherein the fourth first electrically-conductive region is in an electrically floating state, and wherein the fourth first electrically-conductive region is in the peripheral region;
• a first second electrically-conductive region embedded and formed in the semiconductor substrate and facing the second first electrically-conductive region, the third first electrically-conductive region, and the fourth first electrically-conductive region;
• and
• on a side of a second surface opposed to the first surface of the semiconductor substrate, a sixth first electrically-conductive region embedded and formed in the semiconductor substrate, the sixth first electrically-conductive region facing the first second electrically-conductive region,
• wherein the first, second, third, and fourth first electrically-conductive regions are first conductivity type electrically-conductive regions, and
• wherein the first second electrically-conductive region is a second conductivity type electrically-conductive region.

A light-receiving device, comprising:

• a semiconductor substrate including a light-receiving region in which a plurality of light-receiving elements are arranged two-dimensionally in a matrix, and a peripheral region provided around the light-receiving region;
• a first first electrically-conductive region provided at a first surface of the semiconductor substrate for each of the light-receiving elements, wherein the first first electrically-conductive region is coupled to a first electrode, and wherein the first first electrically-conductive region is in the light-receiving region;
• a second first electrically-conductive region provided at the first surface and around the first first electrically-conductive region provided for each of the light-receiving elements, wherein the second first electrically-conductive region is coupled to a second electrode;
• a third first electrically-conductive region provided at the first surface and around the second first electrically-conductive region provided for each of the light-receiving elements, wherein the third first electrically-conductive region is in an electrically floating state;
• a fourth first electrically-conductive region provided at the first surface of the semiconductor substrate and around the light-receiving region, wherein the fourth first electrically-conductive region is in an electrically floating state, and wherein the fourth first electrically-conductive region is in the peripheral region;
• and
• a first second electrically-conductive region embedded and formed in the semiconductor substrate and facing the second first electrically-conductive region, the third first electrically-conductive region, and the fourth first electrically-conductive region,
• wherein the fourth first electrically-conductive region is provided continuously around the light-receiving region, and meanders in accordance with pitches of the plurality of light-receiving elements arranged two-dimensionally in matrix in the light-receiving region,
• wherein the first, second, third, and fourth first electrically-conductive regions are first conductivity type electrically-conductive regions, and
• wherein the first second electrically-conductive region is a second conductivity type electrically-conductive region.

An X-ray imaging device, comprising:

• a plurality of light-receiving elements generating signal charge based on an X-ray;
• a semiconductor substrate including a light-receiving region in which the plurality of light-receiving elements are arranged two-dimensionally in matrix, and a peripheral region provided around the light-receiving region;
• a first first electrically-conductive region provided at a first surface of the semiconductor substrate for each of the light-receiving elements, wherein the first first electrically-conductive region is coupled to a first electrode, and wherein the first first electrically-conductive region is in the light-receiving region;
• a second first electrically-conductive region provided at the first surface and around the first first electrically-conductive region provided for each of the light-receiving elements, wherein the second first electrically-conductive region is coupled to a second electrode;
• a third first electrically-conductive region provided at the first surface and around the second first electrically-conductive region provided for each of the light-receiving elements, wherein the third first electrically-conductive region is in an electrically floating state;
• a fourth first electrically-conductive region provided at the first surface of the semiconductor substrate and around the light-receiving region, wherein the fourth first electrically-conductive region is in an electrically floating state, and wherein the fourth first electrically-conductive region is in the peripheral region;
• and
• a first second electrically-conductive region embedded and formed in the semiconductor substrate and facing the second first electrically-conductive region, the third first electrically-conductive region, and the fourth first electrically-conductive region,
• wherein the first, second, third, and fourth first electrically-conductive regions are first conductivity type electrically-conductive regions, and
• wherein the first second electrically-conductive region is a second conductivity type electrically-conductive region.

An electronic apparatus comprising an X-ray imaging device,

• the X-ray imaging device including
• a plurality of light-receiving elements generating signal charge based on an X-ray,
• a semiconductor substrate including a light-receiving region in which the plurality of light-receiving elements are arranged two-dimensionally in matrix, and a peripheral region provided around the light-receiving region,
• a first first electrically-conductive region provided at a first surface of the semiconductor substrate for each of the light-receiving elements, wherein the first first electrically-conductive region is coupled to a first electrode, and wherein the first first electrically-conductive region is in the light-receiving region,
• a second first electrically-conductive region provided at the first surface and around the first first electrically-conductive region provided for each of the light-receiving elements, wherein the second first electrically-conductive region is coupled to a second electrode,
• a third first electrically-conductive region provided at the first surface and around the second first electrically-conductive region provided for each of the light-receiving elements, wherein the third first electrically-conductive region is in an electrically floating state,
• a fourth first electrically-conductive region provided at the first surface of the semiconductor substrate and around the light-receiving region, wherein the fourth first electrically-conductive region is an electrically floating state, in the peripheral region, and
• a first second electrically-conductive region embedded and formed in the semiconductor substrate and facing the second first electrically-conductive region, the third first electrically-conductive region, and the fourth first electrically-conductive region,
• wherein the first, second, third, and fourth first electrically-conductive regions are first conductivity type electrically-conductive regions, and
• wherein the first second electrically-conductive region is a second conductivity type electrically-conductive region.