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US 12,696,549 B2Granted
Energy harvest and storage device for semiconductor chips and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Hai Li, Yi Ching Ong, Kuo-Ching Huang
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Abstract
A semiconductor structure may include semiconductor devices located on a substrate, metal interconnect structures that are located within dielectric material layers overlying the semiconductor devices and are electrically connected to the semiconductor devices, and an energy harvesting device located over the metal interconnect structures and comprising a Schottky barrier diode, a first diode electrode located on a first side of the Schottky barrier diode, and a second diode electrode connected to a second side of the Schottky barrier diode.
Claims20
A semiconductor structure comprising:
- metal interconnect structures that are located within dielectric material layers and overlying a substrate;
- an energy harvesting device located over the metal interconnect structures and comprising a Schottky barrier diode, wherein the Schottky barrier diode comprises a first diode electrode located on a first side of the Schottky barrier diode, and a second diode electrode connected to a second side of the Schottky barrier diode;
- and
- a battery structure overlying the energy harvesting device and comprising an energy storage medium, wherein:
- the battery structure comprises a first battery electrode that is the second diode electrode of the Schottky barrier diode;
- the energy storage medium comprises an ionic crystal plate including an ionic crystal having ionic conductivity greater than 1.0×10−5 S/cm in a temperature range from −40 degrees Celsius to 125 degrees Celsius;
- and
- the battery structure comprises:
- a blocking dielectric layer comprising a dielectric metal oxide material and located between the ionic crystal plate and the first battery electrode;
- and
- a conductive metal oxide layer located between the blocking dielectric layer and the first battery electrode.
8 more elements
A semiconductor structure comprising:
- semiconductor devices located over a semiconductor substrate;
- an energy harvesting device located over the semiconductor devices and comprising a Schottky barrier diode that comprises a first diode electrode and a second diode electrode;
- and
- a battery structure overlying the energy harvesting device and comprising an energy storage medium, a first battery electrode, and a second battery electrode,
- wherein a metal-containing layer comprises both the second diode electrode of the Schottky barrier diode and the first battery electrode, and has a first surface contacting a surface of the compound semiconductor material plate of the Schottky barrier diode and has a second surface located on an opposite side of the metal-containing layer and contacting a surface of the energy storage medium.
2 more elements
A semiconductor structure comprising:
- an energy harvesting device located over a semiconductor substrate and comprising a Schottky barrier diode, wherein the Schottky barrier diode comprises a first diode electrode located on a first side of the Schottky barrier diode, and a second diode electrode connected to a second side of the Schottky barrier diode, wherein the Schottky barrier diode comprises a Schottky barrier junction located at an interface between a high work function plate including a high work function material having a work function greater than 4.5 eV and a compound semiconductor material plate including a compound semiconductor material;
- and
- a battery structure overlying the energy harvesting device and comprising an energy storage medium, a first battery electrode, and a second battery electrode,
- wherein a metal-containing layer comprises both the second diode electrode of the Schottky barrier diode and the first battery electrode, and has a first surface contacting a surface of the compound semiconductor material plate of the Schottky barrier diode and has a second surface located on an opposite side of the metal-containing layer and contacting a surface of the energy storage medium.
1 more element
Dependencies are inferred from the claim text.