Three-dimensional framework silicon/perovskite tandem solar cell and its preparation method

A preparation method for a three-dimensional framework silicon/perovskite tandem solar cell, wherein the three-dimensional framework silicon/perovskite tandem solar cell is in a formal structure, and the preparation method for the three-dimensional framework silicon/perovskite tandem solar cell comprises the following steps:

• step 1:
• preparing an n-type silicon nanowire on a substrate;
• step 2:
• sequentially depositing an i-type intrinsic amorphous silicon layer, a p-type amorphous silicon layer and a top electrode light-transmitting layer on the n-type silicon nanowire;
• and
• step 3:
• sequentially preparing an n-type transmission layer, a perovskite film, a p-type transmission layer, a buffer layer and a transparent electrode on the top electrode light-transmitting layer to obtain the three-dimensional framework silicon/perovskite tandem solar cell;
• wherein the preparation method further comprises:
• preparing metal tin (Sn) film nanoparticles on a surface of the substrate before preparing the n-type silicon nanowire on the substrate;
• constructing a tunneling layer of a gold film on the top electrode light-transmitting layer before preparing the n-type transmission layer on the top electrode light-transmitting layer;
• wherein the n-type silicon nanowire is multiple in quantity arranged in a spatial array;
• the i-type intrinsic amorphous silicon layer, the p-type amorphous silicon layer, the top electrode light-transmitting layer, the tunneling layer, the n-type transmission layer, the perovskite thin film, the p-type transmission layer, the buffer layer, and the transparent electrode are sequentially deposited around each of the multiple n-type silicon nanowires by a layer-by-layer manner to form the three-dimensional framework silicon/perovskite tandem solar cell;
• and
• wherein the perovskite film is prepared by:
• taking lead diiodide (PbI2) powder and methylamine iodine (MAI) powder, depositing a layer of PbI2 film with a thickness of 250 nm and subsequently depositing a layer of MAI film with a thickness of 250 nm at a deposition rate of 0.5 angstroms per second (Å/s) under a pressure of 10 pascals (Pa) to obtain a deposition product, and annealing the deposition product in dry air at 150° C. for 10 minutes to obtain the perovskite film.