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US 12,696,502 B2Granted
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsYuichi Harada, Seiji Noguchi, Norihiro Komiyama, Yoshihiro Ikura, Yosuke Sakurai, Yoshihisa Suzuki
Life of this patent
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Abstract
Provided is a semiconductor device including: a semiconductor substrate having a drift region of a first conductivity type; and a buffer region of the first conductivity type provided between the drift region and a lower surface of the semiconductor substrate and having a higher doping concentration than the drift region. The buffer region has two or more helium chemical concentration peaks arranged at different positions in a depth direction of the semiconductor substrate.
Claims21
A semiconductor device comprising:
- a semiconductor substrate having a drift region of a first conductivity type;
- and
- a buffer region of the first conductivity type provided between the drift region and a lower surface of the semiconductor substrate and having throughout a higher doping concentration than the drift region, wherein
- the buffer region has two or more helium chemical concentration peaks arranged at different positions in a depth direction of the semiconductor substrate, and
- the two or more helium chemical concentration peaks each have two points at which a full width, half maximum intersect, with the two points of each of the two or more helium chemical concentration peaks being arranged farther away from the lower surface of the semiconductor substrate than two points at which a full width, half maximum intersect a shallowest hydrogen chemical concentration peak.
2 more elements
Dependencies are inferred from the claim text.