Electroluminescence element and method of manufacturing electroluminescence element
AssigneeMikuni Electron Corporation
InventorSakae Tanaka
Life of this patent
Estimating the term…
Abstract
A method of manufacturing an electroluminescence element according to an embodiment of the present invention includes forming a first electrode on a substrate, forming a first electron transport layer in contact with the first electrode, forming a first insulating layer having an opening in a region overlapping with the first electrode, forming a second electron transport layer includes metal oxide semiconductor by applying a composition to the opening and removing a solvent after application, forming a light emitting layer overlapping with the second electron transport layer, the light emitting layer containing an electroluminescent material, forming a second electrode in a region overlapping with the light emitting layer.
Claims17
A method of manufacturing an inverted stack electroluminescence element, the method comprising:
- forming a first electrode on a substrate;
- forming a first electron transport layer in contact with the first electrode;
- forming a first insulating layer having an opening in a region overlapping with the first electrode;
- forming a second electron transport layer including metal oxide semiconductor by applying a liquid composition to the opening and removing a solvent by thermal treatment after application, wherein a specific resistance of the second electron transport layer is in the range of 102 Ω·cm to 106 Ω·cm, the second electron transport layer is smaller in area than an area of a region where the first electron transport layer is disposed;
- forming a light emitting layer overlapping with the second electron transport layer, the light emitting layer containing an electroluminescent material;
- and
- forming a second electrode in a region overlapping with the light emitting layer.
An inverted stack electroluminescence element comprising:
- A first electrode;
- a second electrode having a region facing the first electrode;
- a first insulating layer between the first electrode and the second electrode;
- an electron transport layer electrically connected to the first electrode;
- and
- a light emitting layer containing an electroluminescent material between the electron transport layer and the second electrode,
- wherein the first insulating layer has an opening,
- wherein the opening has an overlapping region where the second electrode, the light emitting layer, the electron transport layer, and the first electrode overlap,
- wherein the electron transport layer has a first electron transport layer in contact with the first electrode and a second electron transport layer arranged in the opening and in contact with the first electron transport layer, and
- wherein a thickness of the second electron transport layer is larger at an edge of the opening than at a center of the opening, the second electron transport layer is in contact with a side surface of the opening and rises along the side surface the second electron transport layer is positioned within the opening, an area where the second electron transport layer is arranged is smaller than an area where the first electron transport layer is arranged, and a specific resistance opening of the second electron transport layer in the range of 102 Ω·cm to 106 Ω·cm.
Dependencies are inferred from the claim text.