High-speed dynamic-impedance digital CMOS gate drivers for wide band-gap power devices

An electronic device comprising:

• a transistor;
• and
• a driver coupled to the transistor and configured to drive the transistor, wherein the driver comprises:
• an input buffer configured to receive an input voltage pulse as an input, and to output, responsive to a leading edge of the input voltage pulse, a logic high voltage pulse at a first output of the input buffer and a logic low voltage pulse at a second output of the input buffer;
• an array of L active pull-up devices electrically coupled between a positive supply rail and an output node, each active pull-up device driven by the logic high voltage pulse as modulated by a corresponding bit of a series of N first L-bit binary words;
• an array of L active pull-down devices electrically coupled between a negative supply rail and the output node, each active pull-down device driven by the logic low voltage pulse as modulated by a corresponding bit of a series of M second L-bit binary words;
• an array of L first switches respectively coupled to the array of L active pull-up devices and controlled by a respective bit of each of the first L-bit binary words;
• and
• an array of L second switches respectively coupled to the array of L active pull-down devices and controlled by a respective bit of each of the second L-bit binary words,
• wherein the series of N first L-bit binary words comprises at least two different first L-bit binary words that are applied at different times during the logic high voltage pulse, and
• wherein the series of M second L-bit binary words comprises at least two different second L-bit binary words that are applied at different times during the logic low voltage pulse.