Power semiconductor module

A power semiconductor module comprising:

• a casing;
• a first gate electrode which is led to an outside of the casing;
• a first reference potential electrode which is led to an outside of the casing;
• a first switching element provided on the inside of the casing and configured by a first semiconductor chip having a first gate terminal and a first emitter terminal;
• a first Zener diode provided on an inside of the casing;
• a first signal path provided between the first gate electrode and the first gate terminal;
• a second signal path provided between the first reference potential electrode and the first emitter terminal;
• a third insulating substrate having a first wiring pattern that constitutes a part of the first signal path and a second wiring pattern that constitutes a part of the second signal path;
• a first insulating substrate to which the first semiconductor chip is joined;
• a second switching element provided on the inside of the casing and configured by a second semiconductor chip having a second gate terminal and a second emitter terminal;
• a second insulating substrate to which the second semiconductor chip is joined;
• a third signal path provided between the first gate electrode and the second gate terminal via the first wiring pattern;
• and
• a fourth signal path provided between the first reference potential electrode and the second emitter terminal via the second wiring pattern, wherein
• the first Zener diode is joined between the first wiring pattern and the second wiring pattern.