Apparatus and techniques for substrate processing using independent ion source and radical source
AssigneeApplied Materials, Inc.
InventorsAnthony Renau, Joseph C. Olson, Peter F. Kurunczi
Life of this patent
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Abstract
A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.
Claims16
A method, comprising:
- providing a substrate in a process chamber;
- directing an ion beam to the substrate from an ion beam source;
- and
- directing a radical beam to the substrate from a radical beam source, separate from the ion beam source, wherein the directing the ion beam to the substrate comprises scanning the ion beam with respect to the substrate, using an ion beam source scanner;
- wherein the ion beam comprises a ribbon ion beam, and wherein the radical beam comprises a ribbon radical beam.
A method, comprising:
- providing a substrate in a process chamber;
- directing an ion beam to the substrate from an ion beam source;
- and
- directing a radical beam to the substrate from a radical beam source, separate from the ion beam source, wherein the directing the radical beam to the substrate comprises scanning the radical beam with respect to the substrate, using a radical beam source scanner;
- wherein the ion beam comprises a ribbon ion beam, and wherein the radical beam comprises a ribbon radical beam.
Dependencies are inferred from the claim text.