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US 12,694,940 B2Granted
Nonvolatile memory device, storage device having the same, and testing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsYongha Park, Seaeun Park, Saeeun Kim
Life of this patent
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Abstract
A nonvolatile memory device includes at least one first universal interface bus (UIB) circuit coupled to a plurality of input/output (I/O) pads, at least one second UIB circuit coupled to the plurality of I/O pads, a core block including a first input terminal coupled to another block, and a plurality of second input terminals coupled to a first output terminal of the at least one first UIB circuit and a second output terminal of the at least one second UIB circuit, and at least one block configured to activate the at least one second UIB circuit.
Claims10
A nonvolatile memory device, comprising:
- at least one first universal interface bus (UIB) circuit coupled to a plurality of input/output (I/O) pads;
- at least one second UIB circuit coupled to the plurality of I/O pads;
- a core block comprising:
- a first input terminal coupled to another block;
- and
- a plurality of second input terminals coupled to a first output terminal of the at least one first UIB circuit and a second output terminal of the at least one second UIB circuit;
- and
- at least one block configured to activate the at least one second UIB circuit.
5 more elements
Dependencies are inferred from the claim text.