Integrated photodetector with embedded semiconductor region

An optical module, comprising:

• a central region having a polygonal profile from a top-down view;
• waveguides surrounding the central region and ending at the central region, wherein the waveguides end at vertices of the polygonal profile of the central region and contact the vertices of the polygonal profile from a plurality of different directions;
• photodetectors integrated into the waveguides surrounding the central region;
• a first pad coupled to N-type regions of the photodetectors;
• and
• a second pad coupled to P-type regions of the photodetectors.

An integrated device, comprising:

• a first photodetector over a substrate and comprising a first central rib extending in a first direction and first peripheral ribs extending in the first direction and spaced from the first central rib in a second direction perpendicular to the first direction;
• a first optical coupler coupled to the first photodetector by a first strip waveguide;
• a second photodetector over the substrate and comprising a second central rib extending in a third direction different from the first direction and second peripheral ribs extending in the third direction and spaced from the second central rib in a fourth direction perpendicular to the third direction;
• a second optical coupler coupled to the second photodetector by a second strip waveguide;
• and
• a central region comprising a semiconductor material and coupled to the first photodetector and the second photodetector, wherein the central region and the first strip waveguide are at opposite ends of the first photodetector and wherein the central region and the second strip waveguide are at opposite ends of the second photodetector.