Direct attach radiation detector structures including pixelated sensors and read-out circuitry having varying pitch

A detector structure, comprising:

• at least one radiation sensor comprising an array of pixel detectors;
• an application specific integrated circuit (ASIC), comprising:
• an array of unit cells, each unit cell comprising signal processing channel circuitry and a contact region on a front surface of the ASIC, wherein the contact region comprises an input node to the signal processing circuitry of the unit cell;
• and
• a redistribution layer located on the front surface of the ASIC, the redistribution layer comprising at least one bonding region laterally displaced from, and electrically connected to, a contact region of a unit cell;
• and
• a plurality of bonding material portions, each of the bonding material portions extending between a respective pixel detector of the array of pixel detectors and the front surface of the ASIC, wherein at least a portion of the bonding material portions contact a bonding region of the redistribution layer;
• wherein:
• the array of unit cells has an identical pitch between adjacent unit cells in the array unit cells,
• the pixel detectors of the radiation sensor have an identical pitch between adjacent pixel detectors, wherein the pitch between adjacent pixel detectors is greater than the pitch between adjacent unit cells, and
• a ratio between the pitch between adjacent pixel detectors and the pitch between adjacent unit cells is a non-integer value.

A detector structure, comprising:

• at least one radiation sensor comprising an array of pixel detectors having a first pitch between adjacent pixel detectors;
• and
• an application specific integrated circuit (ASIC) comprising an array of unit cells having a second pitch between adjacent pixel detectors, each unit cell comprising signal processing channel circuitry and a contact region on a front surface of the ASIC that comprises an input node to the signal processing circuitry of the unit cell,
• wherein:
• the first pitch is greater than the second pitch,
• the at least one radiation sensor is mounted over the front surface of the ASIC such that each pixel detector is electrically coupled to a contact region of a respective unit cell of the ASIC,
• a first plurality of the unit cells of the ASIC comprise active unit cells that include a contact region that is electrically coupled to a pixel detector of the at least one radiation sensor, and
• a second plurality of the unit cells of the ASIC comprise inactive unit cells that are not electrically coupled to a pixel detector of the at least one unit sensor.