Film formation apparatus

A film formation apparatus, comprising:

• a vacuum chamber capable of evacuating an interior thereof;
• a substrate support portion provided in the vacuum chamber and configured to support a substrate;
• a target support portion provided in the vacuum chamber and configured to support a target containing nitrogen and gallium;
• a sputtering gas supply unit connected to the vacuum chamber and configured to supply a sputtering gas to the vacuum chamber;
• a sputtering power supply configured to apply a voltage to the target;
• a radical supply source connected to the vacuum chamber and configured to be capable of supplying at least one of nitrogen radicals generated from an N2 gas and hydrogen radicals generated from an H2 gas to the vacuum chamber;
• a dopant supply source connected to the vacuum chamber and configured to be capable of supplying a dopant to the vacuum chamber;
• and
• a control unit configured to control the sputtering gas supply unit, the sputtering power supply, the radical supply source, and the dopant supply source,
• wherein the control unit controls the sputtering gas supply unit, the sputtering power supply, the radical supply source, and the dopant supply source so that a first period in which the sputtering gas, and at least one of the nitrogen radicals and the hydrogen radicals are supplied to the vacuum chamber and the sputtering power supply is in an on-state, and a second period in which the dopant is supplied to the vacuum chamber are repeated, and
• wherein in the first period, the control unit controls the start of supplying the sputtering gas and turning on of the sputtering power supply after starting the supply of at least one of the nitrogen radicals and the hydrogen radicals.