Aluminum bonding wire for power semiconductor

An aluminum wire manufacturing method comprising:

• a step of preparing an aluminum alloy material, the aluminum alloy material being an aluminum alloy having an aluminum purity of 99 mass % or more and containing, relative to a total amount of the aluminum alloy, a total of 0.01 mass % or more and 1 mass % or less of iron and silicon;
• and
• a step of performing wire drawing on the aluminum alloy material,
• wherein in a lateral cross-section in a direction perpendicular to a wire axis of the aluminum wire, an orientation index of (111) is 1 or more, an orientation index of (200) is 1 or less, and an area ratio of precipitated particles to the lateral cross-section in the direction perpendicular to the wire axis is 0.02% or more and 2% or less.

A semiconductor device comprising:

• a semiconductor element having an electrode;
• and
• an aluminum wire connected to the electrode,
• the aluminum wire comprising an aluminum alloy having an aluminum purity of mass % or more, and the aluminum wire containing, relative to a total amount of the aluminum alloy, a total of 0.01 mass % or more and 1 mass % or less of iron and silicon,
• wherein in a lateral cross-section in a direction perpendicular to a wire axis of the aluminum wire, an orientation index of (111) is 1 or more, an orientation index of (200) is 1 or less, and an area ratio of precipitated particles to the lateral cross-section in the direction perpendicular to the wire axis is 0.02% or more and 2% or less.