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US 12,692,166 B2Granted
Preparation method of high purity SiC powder
AssigneeKCindustrial Co., Ltd.
InventorsGyu Do Lee, Tae Hee Kim, Chae Young Lee
Life of this patent
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Abstract
The process for preparing high purity SiC powders according to embodiments not only solves the environmental problems by using waste SiC, but also reduces the manufacturing cost with high yield, high productivity, and high uniformity.
Claims8
A process for preparing high purity SiC powders, which comprises:
- cutting waste SiC;
- removing graphite from the cut waste SiC;
- pulverizing the waste SiC from which the graphite has been removed;
- removing an iron (Fe) component from the pulverized waste SiC;
- and
- cleaning the waste SiC from which the iron component has been removed,
- wherein the step of removing graphite further comprises oxidizing the cut waste SiC at a temperature of 1,200° C. or lower.
4 more elements
A process for preparing high purity SiC powders, which comprises:
- cutting waste SiC:
- removing graphite from the cut waste SiC;
- pulverizing the waste SiC from which the graphite has been removed;
- removing an iron (Fe) component from the pulverized waste SiC;
- and
- cleaning the waste SiC from which the iron component has been removed,
- wherein the step of removing graphite from the cut waste SiC further comprises quenching the cut waste SiC at a temperature of 0° C. to 60° C.
4 more elements
A process for preparing high purity SiC powders, which comprises:
- cutting waste SiC;
- removing graphite from the cut waste SiC;
- pulverizing the waste SiC from which the graphite has been removed;
- removing an iron (Fe) component from the pulverized waste SiC;
- and
- cleaning the waste SiC from which the iron component has been removed,
- wherein the step of removing graphite from the cut waste SiC comprises a first oxidation step, a first quenching step, a shot blasting step, a second oxidation step, and a second quenching step.
4 more elements
Dependencies are inferred from the claim text.