Apparatus for printing wide bandgap semiconductor materials
AssigneeThe Johns Hopkins University
InventorsJarod C. Gagnon, Michael J. Presley, Steven M. Storck, Jeffrey P. Maranchi
Life of this patent
Estimating the term…
Abstract
A method for printing a semiconductor material includes depositing a molten metal onto a substrate in an enclosed chamber to form a trace having a maximum height of 15 micrometers and/or a maximum width of 25 micrometers to 10 millimeters and/or a thin film having a maximum height of 15 micrometers. The method further includes reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material. The depositing the molten metal includes depositing a metal composition including the molten metal and an etchant or depositing the etchant separate from the molten metal in the enclosed chamber.
Claims10
An apparatus comprising:
- an enclosed chamber;
- an injection orifice that traverses a top flange of the enclosed chamber through a gastight seal, wherein the injection orifice is in fluid communication with a molten metal source;
- a moveable seal that connects sidewalls of the enclosed chamber to the top flange and allows relative movement therebetween;
- a heated stage capable of heating a substrate to a temperature of at least 900° C.;
- at least one of a translation control unit capable of translating the injection orifice or a motor control unit capable of translating the heated stage;
- a containment chamber, wherein the enclosed chamber and the at least one of the translation control unit or the motor control unit if present are located in the containment chamber;
- a gas stream inlet;
- and
- a gas stream outlet.
Dependencies are inferred from the claim text.