Method for manufacturing a semiconductor device

A method for manufacturing a semiconductor device, comprising:

• providing a bonding structure on a support structure, wherein the bonding structure includes a first substrate structure, a second substrate structure, and a bonding metal layer between the first substrate structure and the second substrate structure;
• and
• irradiating a laser beam to the bonding structure through the first substrate structure,
• wherein the laser beam passes through the first substrate structure and the second substrate structure to reach the bonding metal layer.

A method for manufacturing a semiconductor device, comprising:

• forming a first bonding insulation layer on a first substrate structure;
• removing a part of the first bonding insulation layer to form a first trench;
• forming a first adhesive layer along a bottom surface and side walls of the first trench;
• forming a first metal layer on the first adhesive layer to form a first bonding metal layer, the first metal layer including a metal material different from the first adhesive layer;
• forming a second bonding insulation layer on a second substrate structure;
• removing a part of the second bonding insulation layer to form a second trench;
• forming a second adhesive layer along a bottom surface and side walls of the second trench;
• forming a second metal layer on the second adhesive layer to form a second bonding metal layer, the second metal layer including a metal material different from the second adhesive layer;
• providing the second substrate structure on the first substrate structure;
• and
• irradiating a laser beam to the first substrate structure and the second substrate structure to bond the first metal layer with the second metal layer.