Semiconductor device and method for producing semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorTomohiro Iguchi
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AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorTomohiro Iguchi
Estimating the term…
A semiconductor device according to the embodiment includes: a frame body having a wall surface; an insulating substrate surrounded by the frame body, the insulating substrate having a first metal layer and a second metal layer on a surface, the second metal layer being located between the first metal layer and the wall surface; a semiconductor chip including an electrode and provided on the first metal layer; and a bonding wire having a first bond portion connected to the electrode, a second bond portion connected to the second metal layer, and an intermediate portion between the first bond portion and the second bond portion; wherein a second angle formed between a second direction in which the second bond portion extends and the wall surface is smaller than a first angle formed between a first direction in which the intermediate portion extends and the wall surface.
A semiconductor device comprising:
A method for producing a semiconductor device, the method comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.