Semiconductor device including through via and method of making

A semiconductor device comprising:

• a substrate;
• a conductive mesh on a first side of the substrate;
• an active region on a second side of the substrate, wherein the first side of the substrate is opposite to the second side of the substrate;
• a through via electrically connected to the conductive mesh, wherein the through via extends through the substrate;
• and
• a gate structure on the second side of the substrate, wherein the gate structure is in direct contact with the through via, the gate structure overlaps a top surface of the through via in a top view, the gate structure extends beyond a periphery of the through via in a direction parallel to a surface of the second side of the substrate, and a portion of the gate structure is closer to the conductive mesh in a direction perpendicular to the surface of the second side of the substrate than a contact location between the gate structure and the through via.

A semiconductor device comprising:

• a substrate;
• a routing structure on a first side of the substrate;
• a plurality of active regions on a second side of the substrate, wherein the first side of the substrate is opposite to the second side of the substrate;
• a through via electrically connected to the routing structure, wherein the through via extends through the substrate between adjacent active regions of the plurality of active regions;
• and
• a contact structure on the second side of the substrate, wherein the contact structure is in direct contact with a top surface of the through via, and the contact structure is in direct contact with a sidewall of a first active region of the plurality of active regions.