Thin film transistor and ultrasonic imaging base board
AssigneeBoe Technology Group Co., Ltd.
InventorsRui Huang, Zhao Cui, Jinchao Zhang, Wenqu Liu, Yue Tong, Liwei Liu, Yonggang Cao
Life of this patent
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Abstract
A thin film transistor and an ultrasonic imaging base board. The thin film transistor includes: a substrate (100), and a first gate (101), a first gate insulation layer (102), a first active layer (103), a second gate insulation layer (104) and a second gate (105) stacked on a side of the substrate (100), and the first gate (101) is connected to the second gate (105).
Claims14
A thin film transistor, comprising:
- a substrate, and a first gate, a first gate insulation layer, a first active layer, a second gate insulation layer, and a second gate stacked on a side of the substrate, wherein the first gate is disposed close to the substrate;
- wherein an orthographic projection of the first gate on the substrate, an orthographic projection of the second gate on the substrate, and an orthographic projection of the first active layer on the substrate overlap with each other, and the first gate is connected to the second gate;
- wherein the first active layer comprises:
- a channel region, and a source contact region and a drain contact region located on two sides of the channel region;
- wherein the orthographic projection of the first gate on the substrate and the orthographic projection of the second gate on the substrate cover the orthographic projection of the channel region on the substrate;
- an ion doping concentration of the source contact region and the drain contact region is greater than the ion doping concentration of the channel region;
- wherein
- the channel region comprises:
- a first channel region and a second channel region separated from each other in a second direction;
- the second gate comprises a first sub-gate and a second sub-gate separated from each other in the second direction;
- wherein, in the second direction, the orthographic projection of the first sub-gate on the substrate completely overlaps with the orthographic projection of the first channel region on the substrate, and the orthographic projection of the second sub-gate on the substrate completely overlaps with the orthographic projection of the second channel region on the substrate.
A thin film transistor, comprising:
- a substrate, and a first gate, a first gate insulation layer, a first active layer, a second gate insulation layer, and a second gate stacked on a side of the substrate, wherein the first gate is disposed close to the substrate;
- wherein an orthographic projection of the first gate on the substrate, an orthographic projection of the second gate on the substrate, and an orthographic projection of the first active layer on the substrate overlap with each other, and the first gate is connected to the second gate;
- wherein
- the first active layer comprises a plurality of sub-regions separated from each other in a first direction;
- in the first direction, the orthographic projection of the first gate on the substrate and the orthographic projection of the second gate on the substrate both cover the orthographic projection of the first active layer on the substrate;
- a recessed region exists between two adjacent sub-regions, and the second gate is arranged to at least partially fill the recessed region, and the orthographic projection of the second gate on a first plane at least partially covers the orthographic projection of the sub-region on the first plane;
- wherein the first plane is perpendicular to the first direction.
An ultrasonic imaging base board, comprising a signal amplification transistor and a conversion transistor connected to the signal amplification transistor, wherein the signal amplification transistor is a thin film transistor comprising a substrate, and a first gate, a first gate insulation layer, a first active layer, a second gate insulation layer, and a second gate stacked on a side of the substrate, wherein the first gate is disposed close to the substrate;
- an orthographic projection of the first gate on the substrate, an orthographic projection of the second gate on the substrate, and an orthographic projection of the first active layer on the substrate overlap with each other, and the first gate is connected to the second gate;
- wherein the ultrasonic imaging base board further comprises:
- a piezoelectric conversion unit, configured to convert an ultrasonic pressure signal received by the ultrasonic imaging base board into an electrical signal, and the piezoelectric conversion unit is connected to the conversion transistor.
Dependencies are inferred from the claim text.