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US 12,690,322 B2Granted
Quantum dot light-emitting diode and fabrication method thereof
AssigneeTcl Technology Group Corporation
InventorZhiwen Nie
Life of this patent
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Abstract
The disclosure relates to a quantum dot light-emitting diode and a fabricating method thereof. The quantum dot light-emitting diode includes a quantum dot layer and an electron transport layer formed on the quantum dot layer. A surface of a side of the quantum dot layer close to the electron transport layer bonds to an ester substance.
Claims14
A quantum dot light-emitting diode (QLED), comprising:
- a quantum dot (QD) layer;
- an electron transport layer formed on the QD layer, wherein a surface of a side of the QD layer close to the electron transport layer is replaced with an ester substance and is in a polar state;
- and a rest area of the QD layer remains a non-polar ligand and is in a non-polar state;
- a surface the QD layer away from the electron transport layer bonds to a first ligand;
- the ester substance is formed through an esterification reaction of a second ligand and a third ligand;
- one end of a carbon chain of the second ligand is a sulfhydryl group, and another end is a carboxyl group, and the second ligand bonds to the surface of the QD layer through the sulfhydryl group;
- and
- one end of the carbon chain of the third ligand is a sulfhydryl group, and another end is a hydroxyl group, and the third ligand bonds to the surface of the QD layer through the sulfhydryl group.
5 more elements
A fabrication method of quantum dot light-emitting diode (QLED), comprising:
- providing a quantum dot (QD) layer having a first ligand bonding to both two surfaces of the QD layer;
- under a vacuum condition, using a second ligand and a third ligand to perform ligand exchange with the first ligand located on one of the two surfaces of the QD layer;
- and
- making the second ligand and the third ligand to undergo an esterification reaction to obtain the QD layer having a surface bonding to an ester substance;
- and
- forming an electron transport layer on the surface of the QD layer to which the ester substance bonds, wherein the surface of a side of the QD layer close to the electron transport layer is replaced with the ester substance and is in a polar state;
- and a rest area of the QD layer remains a non-polar ligand and is in a non-polar state,
- wherein one end of a carbon chain of the second ligand is a sulfhydryl group, and another end is a carboxyl group, and the second ligand bonds to the surface of the QD layer through the sulfhydryl group;
- and
- one end of the carbon chain of the third ligand is a sulfhydryl group, and another end is a hydroxyl group, and the third ligand bonds to the surface of the QD layer through the sulfhydryl group.
7 more elements
Dependencies are inferred from the claim text.