Method of making a semiconductor package with graphene for die attach
AssigneeSTATS ChipPAC Pte. Ltd.
InventorsYongMoo Shin, HeeSoo Lee, SuJeong Kwon
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Abstract
A semiconductor device has a substrate with a die pad. A conductive material is disposed on the die pad. The conductive material includes a plurality of graphene-coated metal balls in a matrix. A semiconductor die is disposed on the conductive material. The conductive material is sintered using an infrared laser. A bond wire is formed between the semiconductor die and substrate. An encapsulant is deposited over the semiconductor die and bond wire.
Claims25
A method of making a semiconductor device, comprising:
- providing a substrate including a die pad;
- disposing a conductive material on the die pad, wherein the conductive material includes a plurality of graphene-coated metal balls in a matrix;
- disposing a semiconductor die on the conductive material, wherein the graphene-coated metal balls are each interconnected as one graphene-coated metal ball of the plurality of graphene-coated metal balls physically contacts another graphene-coated metal ball of the plurality of graphene-coated metal balls within the conductive material to form a continuous thermal conduction path through the graphene-coated metal balls between the surface of the die pad and semiconductor die;
- sintering the conductive material using an infrared laser;
- forming a bond wire between the semiconductor die and substrate;
- and
- depositing an encapsulant over the semiconductor die and bond wire.
A method of making a semiconductor device, comprising:
- providing a substrate;
- disposing a conductive material over the substrate, wherein the conductive material includes a plurality of graphene-coated metal balls;
- and
- disposing a semiconductor die over the conductive material, wherein the graphene-coated metal balls are each interconnected as one graphene-coated metal ball of the plurality of graphene-coated metal balls physically contacts another graphene-coated metal ball of the plurality of graphene-coated metal balls within the conductive material to form a continuous thermal conduction path through the graphene-coated metal balls between the surface of the die pad and semiconductor die.
A method of making a semiconductor device, comprising:
- providing a substrate including a die pad;
- disposing a conductive material on the die pad, wherein the conductive material includes a plurality of graphene-coated metal balls in a matrix;
- disposing a semiconductor die on the conductive material, wherein the graphene-coated metal balls are each interconnected as one graphene-coated metal ball of the plurality of graphene-coated metal balls physically contacts another graphene-coated metal ball of the plurality of graphene-coated metal balls within the conductive material to form a continuous thermal conduction path through the graphene-coated metal balls between the surface of the die pad and semiconductor die;
- sintering the conductive material using an infrared laser;
- and
- depositing an encapsulant over the semiconductor die.
A method of making a semiconductor device, comprising:
- providing a substrate;
- disposing a conductive material over the substrate, wherein the conductive material includes a plurality of graphene-coated metal balls;
- and
- disposing a first semiconductor die over the conductive material, wherein the graphene-coated metal balls are each interconnected as one graphene-coated metal ball of the plurality of graphene-coated metal balls physically contacts another graphene-coated metal ball of the plurality of graphene-coated metal balls within the conductive material to form a continuous thermal conduction path through the graphene-coated metal balls between the surface of the die pad and first semiconductor die.
Dependencies are inferred from the claim text.