Diode and manufacturing method thereof
AssigneeEnkris Semiconductor, Inc.
InventorKai Cheng
Life of this patent
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Abstract
Disclosed are a diode and a manufacturing method thereof. The diode includes: a first substrate, the first substrate being an N-type doped substrate with a doping concentration equal to or greater than 1×1018 cm−3; a metal atomic layer located on a first surface of the first substrate; an epitaxial structure located on the metal atomic layer; a first electrode located on the epitaxial structure; and a second electrode located on a second surface, opposite to the first surface, of the first substrate. The diode significantly reduces forward conduction voltage drop.
Claims19
A diode, comprising:
- a first substrate, the first substrate being an N-type doped substrate with a doping concentration equal to or greater than 1×1018 cm−3;
- a metal atomic layer located on a first surface of the first substrate;
- an epitaxial structure located on the metal atomic layer, wherein the epitaxial structure is in direct contact with the metal atomic layer;
- a first electrode located on the epitaxial structure;
- and
- a second electrode located on a second surface, opposite to the first surface, of the first substrate.
A manufacturing method of a diode, comprising:
- forming a metal atomic layer on a first surface of a first substrate, the first substrate being an N-type doped substrate with a doping concentration equal to or greater than 1×1018 cm−3;
- forming an epitaxial structure on the metal atomic layer, wherein the epitaxial structure is in direct contact with the metal atomic layer;
- forming a first electrode on the epitaxial structure;
- and
- forming a second electrode on a second surface, opposite to the first surface, of the first substrate.
Dependencies are inferred from the claim text.