Image sensing device
AssigneeSK hynix Inc.
InventorJae Hyung Jang
Life of this patent
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Abstract
An image sensing device includes a first detection structure and a second detection structure, each of the first detection structure and the second detection structure configured to generate a current in a substrate and to capture photocharges generated by incident light and carried by the current, wherein each of the first detection structure and the second detection structure includes: at least one detection node configured to capture the photocharges, the at least one detection node including first conductive impurities; and a potential adjustment region overlapping at least a portion of each of the at least one detection node, the potential adjustment region including second conductive impurities different from the first conductive impurities.
Claims20
An image sensing device comprising:
- a first detection structure and a second detection structure, each of the first detection structure and the second detection structure configured to generate a current in a substrate and to capture photocharges generated by incident light and carried by the current,
- wherein each of the first detection structure and the second detection structure includes:
- at least one detection node configured to capture the photocharges, the at least one detection node including first conductive impurities;
- and
- a potential adjustment region overlapping at least a portion of each of the at least one detection node, the potential adjustment region including second conductive impurities different from the first conductive impurities.
An image sensing device comprising:
- a first detection structure and a second detection structure, each of which is configured to generate a current in a substrate and to capture photocharges generated by incident light and carried by the current,
- wherein each of the first detection structure and the second detection structure includes:
- a first doped region that captures the photocharges and includes first conductive impurities;
- and
- a potential adjustment region that is in contact with at least a portion of the first doped region and includes second conductive impurities having a conductivity type different from that of the first conductive impurities.
Dependencies are inferred from the claim text.