Metal oxynitride back contact layers for photovoltaic devices

A photovoltaic device comprising:

• a substrate;
• a front contact over the substrate;
• an absorber layer over the front contact;
• a conducting layer having a surface formed by a layer comprising aluminum;
• and
• a back contact between the absorber layer and the conducting layer, the back contact having a first surface, a second surface, and a thickness defined between the first surface of the back contact and the second surface of the back contact, wherein:
• the thickness of the back contact is in a range of about 10 nm to about 150 nm;
• the first surface of the back contact is in contact with the absorber layer;
• the second surface of the back contact is in contact with the surface of the conducting layer;
• the back contact comprises:
• a first layer comprising zinc and tellurium;
• a second layer comprising zinc and tellurium;
• and a layer comprising a metal oxynitride material;
• wherein:
• the metal of the metal oxynitride material is at least one of titanium or tungsten;
• the first layer comprises a first dopant;
• and
• the second layer comprises a second dopant.