Display substrate having interlayer insulation layer with through hole formed therein, method for manufacturing the same and display panel

A method for manufacturing a display substrate, comprising:

• providing a base substrate;
• forming a plurality of pixel units in the display region on the base substrate, each of the plurality pixel units comprising a first thin film transistor and a pixel electrode;
• forming an active layer of the first thin film transistor in a first semiconductor layer on the base substrate, with the active layer of the first thin film transistor at least comprising a channel region and a drain contact region;
• forming a first insulation layer on the first semiconductor layer away from the base substrate;
• forming a data line in the first insulation layer and on a side of the first semiconductor layer away from the base substrate;
• forming a second through hole penetrating through the first insulation layer;
• forming a second insulation layer on a side of the first insulation layer away from the base substrate;
• forming a first through hole penetrating through the second insulation layer;
• forming a first conductive layer on a side of the second insulation layer away from the first insulation layer, wherein the first conductive layer comprises the pixel electrode directly and electrically connected to the drain contact region of the active layer of the first thin film transistor through the first and second through holes, wherein
• forming the data line comprises:
• forming a plurality of data line segments sequentially connected together, such that each of the plurality of data line segments comprises a first signal line sub-segment extending along a first direction, a second signal line sub-segment extending along a second direction, and a third signal line sub-segment extending along a third direction, with the first direction, the second direction, and the third direction being different from each other, and the third signal line sub-segment, the first signal line sub-segment and the second signal line sub-segment being sequentially connected,
• forming the active layer of the first thin film transistor in the first semiconductor layer, comprises:
• forming a first semiconductor structure of the active layer extending along the first direction, a second semiconductor structure of the active layer extending along a fifth direction, and a third semiconductor structure of the active layer extending along the third direction, with the first direction, the fifth direction, and the third direction being different from each other, and the third semiconductor structure, the first semiconductor structure and the second semiconductor structure being sequentially connected,
• an orthographic projection of the third signal line sub-segment of the data line on the base substrate overlaps an entirety of an orthographic projection of the third semiconductor structure of the active layer on the base substrate, an orthographic projection of the first signal line sub-segment of the data line on the base substrate overlaps an entirety of an orthographic projection of the first semiconductor structure of the active layer on the base substrate, and an orthographic projection of the second signal line sub-segment of the data line on the base substrate overlaps a portion of an orthographic projection of the second semiconductor structure of the active layer on the base substrate, and
• an orthographic projection of the first through hole on the base substrate overlaps with an orthographic projection of the second semiconductor structure on the base substrate.