Semiconductor structure and method manufacturing the same

A semiconductor structure, comprising:

• a substrate;
• a first dielectric layer, disposed over the substrate;
• a plurality of source/drain (S/D) regions, disposed in the substrate;
• a first contact, penetrating through the first dielectric layer to electrically connect the plurality of S/D regions;
• a second dielectric layer, disposed below the plurality of S/D regions;
• a second contact, penetrating through the second dielectric layer;
• and
• a conductive via, penetrating through the substrate to electrically connect the first contact and the second contact, wherein the plurality of S/D regions is disposed aside the conductive via, and the conductive via comprises an anisotropic transport material,
• wherein the first contact and the second contact comprise materials different from materials of the conductive via,
• wherein directional conductivities of the first contact and the second contact are different from directional conductivity of the conductive via.

A method of manufacturing a semiconductor structure, comprising:

• providing a substrate having a plurality of source/drain (S/D) regions formed therein;
• forming a first dielectric layer over the substrate;
• forming a second dielectric layer below the first dielectric layer and the plurality of S/D regions;
• forming a first contact penetrating through the first dielectric layer;
• forming a second contact penetrating through the second dielectric layer;
• and
• forming a conductive via penetrating through the substrate to electrically connect the first contact and the second contact,
• wherein the conductive via is formed of an anisotropic transport material,
• wherein the first contact and the second contact comprise forming materials different from the forming material of the conductive via,
• wherein directional conductivities of the first contact and the second contact are different from directional conductivity of the conductive via.