US 12,690,219 B2Granted

Semiconductor device and method for manufacturing the same

AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation

InventorsYosuke Kajiwara, Miyoko Shimada, Kento Minamikawa, Hiroshi Ono, Daimotsu Kato, Masahiko Kuraguchi

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Abstract

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0≤x1<1). The second semiconductor region includes Alx2Ga1-x2N (0<x2<1, x1<x2). A first nitride portion thickness along a second direction of the first nitride portion is thicker than a second nitride portion thickness along the first direction of the part of the second nitride portion. A first semiconductor portion thickness along the second direction of the first semiconductor portion is thicker than the first nitride portion thickness.

Claims17

Dependent claims

A semiconductor device, comprising:

a first electrode;
a second electrode, a direction from the first electrode to the second electrode being along a first direction;
a third electrode including a first electrode portion, a position of the third electrode in the first direction being between a position of the first electrode in the first direction and a position of the second electrode in the first direction;
a first semiconductor region including Alx1Ga1-x1N (0≤x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a second direction from the first partial region to the first electrode crossing the first direction, a direction from the second partial region to the second electrode being along the second direction, a direction from the third partial region to the first electrode portion being along the second direction, a position of the fourth partial region in the first direction being between a position of the first partial region in the first direction and a position of the third partial region in the first direction, a position of the fifth partial region in the first direction being between the position of the third partial region in the first direction and a position of the second partial region in the first direction;
a second semiconductor region including Alx2Ga1-x2N (0<x2<1, x1<x2), the second semiconductor region including a first semiconductor portion, a direction from the fifth partial region to the first semiconductor portion being along the second direction;
a first nitride region including Al and N, the first nitride region including a first nitride portion and a second nitride portion, the first nitride portion being located between the third partial region and the first electrode portion in the second direction;
and
a first insulating member including a first insulating portion and a second insulating portion, the first insulating portion being located between the first nitride portion and the first electrode portion, a part of the second nitride portion being located between the first insulating portion and the fifth partial region in the first direction, another part of the second nitride portion being located between the second insulating portion and the first semiconductor portion,
a first nitride portion thickness along the second direction of the first nitride portion being thicker than a second nitride portion thickness along the first direction of the part of the second nitride portion, and
a first semiconductor portion thickness along the second direction of the first semiconductor portion being thicker than the first nitride portion thickness,
wherein
the first semiconductor portion thickness is not less than 15 nm and not more than 40 nm,
the first nitride portion thickness is not less than 1 nm and not more than 10 nm, and
the second nitride portion thickness is not less than 0.5 nm and not more than 5 nm.

11 more elements

A semiconductor device, comprising:

a first electrode;
a second electrode, a direction from the first electrode to the second electrode being along a first direction;
a third electrode including a first electrode portion, a position of the third electrode in the first direction being between a position of the first electrode in the first direction and a position of the second electrode in the first direction;
a first semiconductor region including Alx1Ga1-x1N (0≤x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a second direction from the first partial region to the first electrode crossing the first direction, a direction from the second partial region to the second electrode being along the second direction, a direction from the third partial region to the first electrode portion being along the second direction, a position of the fourth partial region in the first direction being between a position of the first partial region in the first direction and a position of the third partial region in the first direction, a position of the fifth partial region in the first direction being between the position of the third partial region in the first direction and a position of the second partial region in the first direction;
a second semiconductor region including Alx2Ga1-x2N (0<x2<1, x1<x2), the second semiconductor region including a first semiconductor portion, a direction from the fifth partial region to the first semiconductor portion being along the second direction;
a first nitride region including Al and N, the first nitride region including a first nitride portion and a second nitride portion, the first nitride portion being located between the third partial region and the first electrode portion in the second direction;
and
a first insulating member including a first insulating portion and a second insulating portion, the first insulating portion being located between the first nitride portion and the first electrode portion, a part of the second nitride portion being located between the first insulating portion and the fifth partial region in the first direction, another part of the second nitride portion being located between the second insulating portion and the first semiconductor portion,
a first nitride portion thickness along the second direction of the first nitride portion being thicker than a second nitride portion thickness along the first direction of the part of the second nitride portion, and
a first semiconductor portion thickness along the second direction of the first semiconductor portion being thicker than the first nitride portion thickness,
wherein
the first nitride portion includes Alz1Ga1-z1N (0<z1<1, x2<z1), and
the second nitride portion includes Alz2Ga1-z2N (0<z2≤1, z1<z2).

10 more elements

A semiconductor device, comprising:

a first electrode;
a second electrode, a direction from the first electrode to the second electrode being along a first direction;
a third electrode including a first electrode portion, a position of the third electrode in the first direction being between a position of the first electrode in the first direction and a position of the second electrode in the first direction;
a first semiconductor region including Alx1Ga1-x1N (0≤x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a second direction from the first partial region to the first electrode crossing the first direction, a direction from the second partial region to the second electrode being along the second direction, a direction from the third partial region to the first electrode portion being along the second direction, a position of the fourth partial region in the first direction being between a position of the first partial region in the first direction and a position of the third partial region in the first direction, a position of the fifth partial region in the first direction being between the position of the third partial region in the first direction and a position of the second partial region in the first direction;
a second semiconductor region including Alx2Ga1-x2N (0<x2<1, x1<x2), the second semiconductor region including a first semiconductor portion, a direction from the fifth partial region to the first semiconductor portion being along the second direction;
a first nitride region including Al and N, the first nitride region including a first nitride portion and a second nitride portion, the first nitride portion being located between the third partial region and the first electrode portion in the second direction;
a first insulating member including a first insulating portion and a second insulating portion, the first insulating portion being located between the first nitride portion and the first electrode portion, a part of the second nitride portion being located between the first insulating portion and the fifth partial region in the first direction, another part of the second nitride portion being located between the second insulating portion and the first semiconductor portion;
and
a first compound region including Al and oxygen,
a first nitride portion thickness along the second direction of the first nitride portion being thicker than a second nitride portion thickness along the first direction of the part of the second nitride portion, and
a first semiconductor portion thickness along the second direction of the first semiconductor portion being thicker than the first nitride portion thickness,
the first compound region including a first compound portion and a second compound portion,
the first compound portion being located between the first nitride portion and the first insulating portion, and
the second compound portion being located between the second insulating portion and the second nitride portion,
wherein
a second compound portion thickness along the first direction of the second compound portion is thicker than a first compound portion thickness along the second direction of the first compound portion.

13 more elements

A semiconductor device, comprising:

a first electrode;
a second electrode, a direction from the first electrode to the second electrode being along a first direction;
a third electrode including a first electrode portion, a position of the third electrode in the first direction being between a position of the first electrode in the first direction and a position of the second electrode in the first direction;
a first semiconductor region including Alx1Ga1-x1N (0≤x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a second direction from the first partial region to the first electrode crossing the first direction, a direction from the second partial region to the second electrode being along the second direction, a direction from the third partial region to the first electrode portion being along the second direction, a position of the fourth partial region in the first direction being between a position of the first partial region in the first direction and a position of the third partial region in the first direction, a position of the fifth partial region in the first direction being between the position of the third partial region in the first direction and a position of the second partial region in the first direction;
a second semiconductor region including Alx2Ga1-x2N (0<x2<1, x1<x2), the second semiconductor region including a first semiconductor portion, a direction from the fifth partial region to the first semiconductor portion being along the second direction;
a first nitride region including Al and N, the first nitride region including a first nitride portion, the first nitride portion being located between the third partial region and the first electrode portion in the second direction;
and
a first insulating member including a first insulating portion and a second insulating portion, the first insulating portion being located between the first nitride portion and the first electrode portion, the second insulating portion contacting the fifth partial region,
wherein
the first nitride region includes Alz1Ga1-z1N (0<z1<1, x2<z1),
the x2 is not less than 0.1 and not more than 0.35, and
the z1 is not less than 0.6 and not more than 1.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/451,218Filed 17 Aug 2023
Priority: JP 2023-02056614 Feb 2023
Published: US 2024/0274703 A115 Aug 2024
Granted: 21 Jul 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 30/475
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: having wider bandgap layer formed on top of lower bandgap…
H10D 30/015
Manufacture or treatment: of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
H10D 30/47
FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels: having two-dimensional [2D] charge…
H10D 30/478
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: the 2D charge carrier gas being at least partially not…