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US 12,689,006 B2Granted
Etching method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsTakashi Kako, Ryu Nagai, Koki Tanaka
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Abstract
A disclosed etching method includes (a) forming a protective film containing carbon on a surface in a chamber of a plasma processing apparatus. The etching method further includes (b) etching an etch film of a substrate with plasma generated from an etching gas that includes a hydrogen fluoride gas and a hydrofluorocarbon gas within the chamber. The substrate includes the etch film, which is a silicon-containing film, and a mask containing carbon and provided on the etch film.
Claims13
An etching method comprising:
- forming a protective film containing carbon on a surface in a chamber of a plasma processing apparatus prior to placing a substrate within the chamber;
- and
- placing the substrate within the chamber and etching an etch film of the substrate with plasma generated from an etching gas including a hydrogen fluoride gas and a hydrofluorocarbon gas within the chamber,
- wherein the substrate includes:
- the etch film, which is a silicon-containing film;
- and
- a mask containing carbon provided on the etch film,
- the protective film is formed using a film-forming gas, the protective film including:
- a first film containing silicon;
- and
- a second film containing carbon formed on the first film,
- the method further comprises:
- forming the first film by plasma-enhanced chemical vapor deposition (CVD) using a gas that includes:
- SiCl4 and H2;
- and
- forming the second film by plasma-enhanced CVD using CH4 gas,
- the plasma processing apparatus is a capacitively coupled plasma processing apparatus, and includes a substrate support provided within the chamber and an upper electrode provided above the substrate support, and
- the method further comprises applying a negative direct-current voltage to the upper electrode in a state where plasma of an inert gas is being generated in the chamber, after forming the protective film and before placing the substrate within the chamber.
15 more elements
An etching method comprising:
- forming a protective film containing carbon on a surface in a chamber of a plasma processing apparatus prior to placing a substrate within the chamber;
- and then
- placing the substrate within the chamber and etching an etch film of the substrate with plasma generated from an etching gas containing a hydrogen fluoride gas and a hydrogen-containing gas within the chamber,
- wherein the substrate includes the etch film, and a mask provided on the etch film,
- the protective film is formed of a same type of material as a material of the mask,
- the forming the protective film includes forming:
- a first film containing silicon;
- and
- a second film containing carbon formed on the first film,
- the method further comprises:
- forming the first film by plasma-enhanced chemical vapor deposition (CVD) using a gas that includes:
- SiCl4 and H2;
- and
- forming the second film by plasma-enhanced CVD using CH4 gas, the second film being comprised of a material different from a material of the first film,
- the plasma processing apparatus is a capacitively coupled plasma processing apparatus, and includes a substrate support provided within the chamber and an upper electrode provided above the substrate support, and
- the method further comprises applying a negative direct-current voltage to the upper electrode in a state where plasma of an inert gas is being generated in the chamber, after forming the protective film and before placing the substrate within the chamber.
13 more elements
Dependencies are inferred from the claim text.