Film deposition apparatus

Abstract

A film deposition apparatus includes a reactive gas supply configured to supply a reactive gas to a first chamber; a source gas supply configured to supply a source gas to a second chamber; a first plasma mechanism configured to generate inductively coupled plasma for activating the reactive gas; a second plasma mechanism configured to generate capacitively coupled plasma for activating the reactive gas activated by the first plasma mechanism and the source gas; and a controller. The second plasma mechanism includes an upper electrode; a lower electrode opposite to the upper electrode; a first high-frequency power supply configured to apply a high-frequency power to the upper electrode via a first matcher; a second high-frequency power supply configured to apply a high-frequency power to the upper electrode via a second matcher; and a third matcher connected to the lower electrode. The third matcher includes a variable capacitor.

Dependencies are inferred from the claim text.