Capacitor structure and semiconductor device

A capacitor structure, comprising:

• a first comb-shaped electrode having a first pad and a plurality of first fingers connecting to the first pad;
• a second comb-shaped electrode having a second pad and a plurality of second fingers connecting to the second pad, wherein one of the second fingers is disposed between two adjacent first fingers;
• a bottom electrode formed in a metal layer, the bottom electrode comprising a first portion, a second portion and a third portion which are separate portions and are spaced apart by a dielectric material, wherein the second potion is disposed between the first portion and the third portion, and wherein each of the first portion, the second portion, and the third portion is electrically isolated from one another through the dielectric material within the metal layer, and the first portion and the third portion are electrically coupled to the first comb-shaped electrode and the second comb-shaped electrode, respectively;
• an insulator layer disposed over the bottom electrode;
• and
• a top electrode disposed over the insulator layer.