Semiconductor testing apparatus and method for testing semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Hsuan Chang, Yuan-Li Lin, Sheng-Ming Yang, Kuo-Ming Lu
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Abstract
A semiconductor testing apparatus is provided, and includes a base, a conductive socket, a pusher, and a thermal interface material structure. The conductive socket is disposed in the base for containing a semiconductor structure. The pusher is over the conductive socket and movable in a vertical direction. The thermal interface material structure is connected to the pusher, and includes a resilient material and a metal film around the resilient material. The metal film and the resilient material are in contact with the pusher.
Claims20
A semiconductor testing apparatus, comprising:
- a base;
- a conductive socket disposed in the base for containing a semiconductor structure;
- a pusher over the conductive socket and movable in a vertical direction;
- and
- a thermal interface material structure connected to the pusher, comprising:
- a resilient material;
- a metal film around the resilient material, wherein the metal film and the resilient material are in contact with the pusher;
- and
- a plurality of thermal conductive strips embedded in the resilient material, wherein the thermal conductive strips are inseparably connected to the pusher,
- wherein the thermal interface material structure has an earlier thickness before contacting the semiconductor structure and a later thickness after released from the semiconductor structure, and a ratio of the later thickness to the earlier thickness is less than about 1 and higher than about 0.7.
A method for testing a semiconductor structure, comprising:
- placing the semiconductor structure on a conductive socket disposed in a base;
- pressing the semiconductor structure by moving a pusher, wherein a thermal interface material structure is connected to the pusher and comprises:
- a resilient material;
- a metal film around the resilient material and configured to contact the semiconductor structure, wherein the thermal interface material structure has a first thickness while being pressed by the pusher;
- and
- a plurality of thermal conductive strips embedded in the resilient material, wherein the thermal conductive strips are inseparably connected to the pusher;
- testing the semiconductor structure via the conductive socket while the semiconductor structure is pressed by the pusher;
- and
- removing the pusher to release the thermal interface material structure from the semiconductor structure, wherein the thermal interface material structure has a second thickness greater than the first thickness when the thermal interface material structure is released from the semiconductor structure, the thermal interface material structure has a third thickness before the thermal interface material structure contacts the semiconductor structure, and a ratio of the second thickness to the third thickness is less than about 1 and higher than about 0.7.
A method for testing a semiconductor structure, comprising:
- placing the semiconductor structure on a conductive socket disposed in a base;
- pressing the semiconductor structure by moving a pusher, wherein a thermal interface material structure is connected to the pusher and comprises:
- a resilient material;
- and
- a metal film around the resilient material;
- and
- a plurality of thermal conductive strips embedded in the resilient material, wherein the thermal conductive strips are inseparably connected to the pusher;
- testing the semiconductor structure via the conductive socket while the semiconductor structure is pressed by the pusher;
- and
- removing the pusher to release the thermal interface material structure from the semiconductor structure,
- wherein the thermal interface material structure has an earlier thickness before contacting the semiconductor structure and a later thickness after released from the semiconductor structure, and a ratio of the later thickness to the earlier thickness is less than about 1 and higher than about 0.7.
Dependencies are inferred from the claim text.