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US 12,686,148 B2Granted
Method of forming patterns in layered materials at an atomic scale
AssigneeUniversity of South Florida
InventorsMichael Cai Wang, YunJo Jeong
Life of this patent
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Abstract
A method of forming a layered material including arranging a 2DLM on a base material comprising one or more Moiré interferences, and adding material or removing material at a location of the one or more Moiré interferences.
Claims10
A method of forming a layered material, the method comprising:
- arranging a two-dimensional layered material (“2DLM”) on a base material at an incommensurate rotational stacking interface such that the stacking interface exhibits a Moiré interference superlattice having one or more reactive regions;
- exposing the one or more reactive regions to a functionalizing material such that the functionalizing material selectively chemisorbs on the reactive regions, thereby forming functionalized regions at the stacking interface that have a different reactivity than neighboring regions;
- exposing the functionalized stacking interface to at least one reactive material wherein the at least one reactive material reacts with the functionalizing material within the functionalized regions to create a chemical bond between the at least one reactive material and the functionalizing material configured to disrupt localized chemical bonds between the 2DLM and the base material neighboring the functionalized regions and create at least one desorbed molecule;
- selectively removing the at least one desorbed molecule from the functionalized regions to form a plurality of apertures, wherein removal of the at least one desorbed molecule leaves apertures of the same shape as the functionalized regions;
- wherein the plurality of apertures are in the 2DLM and not the base material;
- wherein the at least one reactive material is selected from a group comprising an elemental gas, a molecular gas, a plasma, and a combination thereof;
- and
- wherein the at least one reactive material is partially ionized.
5 more elements
Dependencies are inferred from the claim text.