Ampoule for a semiconductor manufacturing precursor
AssigneeApplied Materials, Inc.
InventorsDavid Marquardt, Jose Alexandro Romero
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Abstract
Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and a flow ingress openings of the ampoule adjacent bottom edges of the tubular walls, through which a carrier gas flows in contact with the precursor.
Claims20
An ampoule for a semiconductor manufacturing precursor, the ampoule comprising:
- a container defining a cavity configured to hold the precursor;
- an inlet port and an outlet port, both in fluid communication with the cavity;
- an inlet plenum located between the inlet port and the cavity;
- an outlet plenum located between the outlet port and the cavity;
- a plurality of elongate walls, each of the elongate walls having a top edge and a bottom edge defining a length and configured to contain the precursor, the plurality of elongate walls arranged to define flow channels, each of the elongate walls comprising a flow ingress opening;
- a flow path defined by the flow channels and the flow ingress openings, through which a carrier gas flows in contact with the precursor;
- and
- a lid including a gas distribution insert assembled to the lid and comprising an orifice between the inlet port and the cavity, the orifice having a diameter in a range of from 0.2 mm to 0.9 mm and configured to increase a flow velocity of the carrier gas exiting the inlet plenum and flowing through the orifice into the cavity.
An ampoule for dispensing a vapor mixture of a carrier gas and a low vapor pressure precursor used in semiconductor manufacturing, the ampoule comprising:
- a container having a bottom wall, sidewalls, and a lid assembly, the container defining a cavity configured to hold the precursor, such that a height (H) of the cavity spans from a lower surface of the lid assembly to a top surface of the bottom wall;
- a single inlet port and a single outlet port, both in fluid communication with the cavity;
- an inlet plenum located between the single inlet port and the cavity;
- an outlet plenum located between the single outlet port and the cavity;
- a plurality of elongate tubular walls configured to contain the precursor and arranged to define flow channels, each of the elongate tubular walls having a top edge and a bottom edge defining a length, each of the elongate tubular walls comprising a flow ingress opening extending from the bottom edge, the flow ingress openings being offset such that not one ingress opening overlaps with another ingress opening;
- a lid including a gas distribution insert assembled to the lid and including one to six orifices, each orifice having a diameter in a range of from 0.2 mm to 0.9 mm and configured to increase a flow velocity of the carrier gas exiting the inlet plenum and flowing through each orifice into the cavity;
- and
- a tortuous flow path defined by the flow channels and the flow ingress openings, through which the carrier gas flows in contact with the precursor.
Dependencies are inferred from the claim text.