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US 12,685,225 B2Granted
Semiconductor device and manufacturing method of the same
AssigneeKioxia Corporation
InventorsTakeori Maeda, Soichi Homma
Life of this patent
Estimating the term…
Abstract
According to one or more embodiments, a semiconductor device includes a support having a recess. A plurality of semiconductor chips are stacked on each other in the recess. A plurality of columnar electrodes in the recess extend from the semiconductor chips toward an opening of the support. A wiring layer is disposed over the opening. The recess is filled with an insulating material to cover the semiconductor chips and the columnar electrodes.
Claims9
A method of manufacturing a semiconductor device, the method comprising:
- stacking a plurality of semiconductor chips in a recess formed in a support, the recess extending into the support from a first surface;
- forming a plurality of columnar electrodes on the semiconductor chips extending upward toward an opening of the recess;
- filling an insulating material into the recess to cover the semiconductor chips and the columnar electrodes with the insulating material;
- polishing the insulating material until the first surface of the support and an upper end of each of the columnar electrodes are exposed;
- and
- forming a wiring layer on the insulating material and the upper end of each of the columnar electrodes, wherein
- the upper end of each of the columnar electrodes extends higher than the first surface of the support, and
- the polishing of the insulating material exposes the upper end of each of the columnar electrodes before the first surface.
5 more elements
Dependencies are inferred from the claim text.